1. Electronic Properties of Amorphous Silicon-Selenium Films. F.G. Wakim, S.A. Abo-Namous, A. Al-Jassar and M.-A. Hasan. Appl. Phys. Lett. 42, 523 (1983).
2. On the Stability of Amorphous Silicon-Selenium Films. F. G. Wakim, A. Al-Jassar, M.-A. Hasan and K. Z. Botros. J. Non-Cryst. Solids, 59 & 60, 617 (1983).
3. Chemical Vapor Deposition (CVD) of Conducting Polymer: POLYPYROLE. A. Mohammadi, M.-A. Hasan, B. Liedberg, I. Lundström and W.R. Salaneck. Synthetic Metals, 14, 189 (1986).
4. Nucleation and Growth of Indium Films Deposited Using Ionized, Accelerated Beams. M.-A. Hasan, S.A. Barnett, J.-E. Sundgren and J.E. Greene. J. Vac. Sci. Technol. A5, 1883 (1987).
5. Electronic Properties of Fe2Se4 and As2Se3-xFex Films. F.G. Wakim and M.-A. Hasan. J. Non-cryst. Solids, 89, 257 (1987).
6. A low-Energy, Metal Ion Source For Primary-Ion Deposition and Accelerated Ion Doping During Molecular-Beam Epitaxy. M.-A. Hasan, J. Knall, J.-E. Sundgren, A. Rockett, S.A. Barnett and J.E. Greene. J. Vac. Sci. Technol. B5, 1332 (1987).
7. Incorporation of Accelerated Low-Energy (50-500 eV) In Ions In+ in Si(100) Films During Growth by Molecular Beam Epitaxy. M.-A. Hasan, J. Knall, S.A. Barnett, J.-E. Sundgren, L.C. Markert, A. Rockett and J.E. Greene. J. Appl. Phys, 65, 172, (1989).
8. Electrical Properties of Si Films Doped with 200 eV In+ ions During Growth by Molecular Beam Epitaxy. J.-P. Noel, N. Hirashita, L. Markert, J.-W. Kim, J.E. Greene, J. Knall, W.-X. Ni, M.-A. Hasan and J.-E. Sundgren. J. Appl. Phys., 65, 1189, (1989).
9. Novel Transport Phenomena in Si/Si1-xGex/Si Double Heterojunction Bipolar Transistors. G.D. Shen, D.X. Xu, M. Willander, J. Knall, M.-A. Hasan and G.V. Hansson. Semicond. Sci. Technol. 4, 370 (1989).
10. Dopant Incorporation Kinetics and Abrupt Profiles During Si Molecular Beam Epitaxy. J.-E. Sundgren, J. Knall, W.-X. Ni, M.-A. Hasan, L.C. Markert and J.E. Greene. Thin Solid Films, 183, 281 (1989).
11. Kinetics of dopant Incorporation Using a Low-Energy Antimony Ion Beam During Growth of Si(100) Films by Molecular Beam Epitaxy. W.-X. Ni, J. Knall, M.-A. Hasan, G.V. Hansson, J.-E. Sundgren, L.C. Markert and J.E. Greene. Phys. Rev. B 40, 10449 (1989).
12. Incorporation Probabilities and Depth Distributions of coevaporated Al during Si(100) Molecular Beam Epitaxy. M.-A. Hasan, J.-E. Sundgren, J.V. Hansson, L.C. Markert and J.E. Greene. Thin Solid Films, 184, 61 (1990).
13. Epitaxial Growth of Al on Si(100) and Si(111) by Evaporation in Ultra High Vacuum. M.-A. Hasan, G. Radnoczi and J.-E. Sundgren. Vacuum, 41, 1121 (1990).
14. Photoluminescence Characterization of Indium doped and undoped Silicon Layers by Molecular Beam Epitaxy. A. Henry, W.-X. Ni, M.-A. Hasan, G.V. Hansson and B. Monemar. Semicond. Sci. Technol., 5, 340 (1990).
15. Ambipolar Diffusion Coefficient in MBE Grown Si Layers. V. Grivickas, V. Netiksis, D. Noreika, M. Petrauskas, M. Willander, M.-A. Hasan and W.-X. Ni. J. Appl. Phys., 68, 617 (1990).
16. Epitaxial Growth of Al on Si by Thermal Evaporation in Ultra-High Vacuum: Growth on Si(100)2x1 Single Domain and Double Domain Surfaces at Room Temperature. M.-A. Hasan, G. Radnoczi, J.-E. Sundgren and G.V. Hansson. Surface Sci. 236, 53 (1990).
17. The Influence of Defects on Device Performance of MBE-Grown Si Heterojunction and Strained Si1-xGex/Si Heterostructures. D.X. Xu, G.D. Shen, M. Willander, J. Knall, M.-A. Hasan, and G.V. Hansson. J. Electronic Materials, 10, 1033 (1990).
18. Al Induced crystallization of a-Si G. Radnoczi, A. Robertsson, H. T. G. Hentzel, S. F. Gong and M.-A. Hasan J. Appl. Phys. 69, 6393 (1991).
19. Critical Epitaxial Thickness for Low-Temperature (20-100 oC ) Ge(001)2x1 Growth by Molecular Beam Epitaxy. G. Xue, H.Z. Xiao, M.-A. Hasan, J.E. Greene, and H.K. Birnbaum. J. Appl. Phys.74, 2512 (1993).
20. Thermal Desorption of UV-ozone Oxidized Ge(001) for substrate Cleaning. G. Xue, X.-J. Zhang, A. Agarwal, R. Tsu, M.-A. Hasan, J.E. Greene and A. Rockett. J. Vac. Sci. Technol., A11, 2553, (1993).
21. Surface Segregation and Growth-Mode Transition During the Initial Stages of Si growth on Ge(100)2x1 by Cyclic Gas Source Molecular Beam Epitaxy from Si2H6 R. Tsu, H.Z. Xiao, Y.-W. Kim, M.-A. Hasan, H.K. Birnbaum, J.E. Greene, D.-S. Lin and T.-C. Chiang. J.Appl. Phys. 75, 240 (1994).
22. Defects in Amorphous and Solid Phase Epitaxial Silicon. G. Radnoczi, M.-A. Hasan, J.-E. Sundgren. Thin Solid Film, 240, 39 (1994).
23. Si(100)2x1 Gas-Source Molecular Beam Epitaxy from Si2H6: Growth Kinetics and Boron Doping. T.R. Bramblett, Q. Lu, T. Karasawa, M.-A. Hasan, S.K. Jo, and J.E. Greene. Appl. Phys. Let., 76, 1884, (1994).
24. Solid Phase Epitaxy of Indium-Doped Amorphous Si Layers Prepared by Co-evaporation on Si(100) Substrates Under Ultra-High Vacuum Conditions. H. Radpisheh, M.-A. Hasan, G. Radnoczi, and J.-E. Sundgren. Subm. to J.Appl. Phys.
25. B-Doped Si(001) Grown by Gas-Source Molecular-Beam-Epitaxy from Si2H6 and B2H6: B Incorporation and Electrical Properties. Q. Lu, T.R. Bramblett, N.-E. Lee, M.-A. Hasan, S.K. Jo, T. Karasawa, and J. E. Greene. J. Appl. Phys., 77, 3067 (1995).
26. Electrical Properties of MBE Grown Si:Sb, Si1-xOx:Sb and Si1-xGex Layers at High Excitation Density. V. Grivickas, V. Netiksis, D. Noreika, M. Petrauskas, M. Willander, W.-X. Ni, M.-A. Hasan, G.V. Hansson and J.-E. Sundgren. Submitted to Appl. Phys. Lett.
27. Si(100)2x1 and Ge(100)2x1 Gas-Source Molecular Beam Epitaxy From Si2H6 and Ge2H6: Growth Kinetics and Boron Doping. T.R. Bramblett, Q. Lu, T. Karasawa, M.-A. Hasan, S.K. Jo, and J. E. Greene. Vacuum, 46, 913 (1995).
28. Ge(001) Gas-Source Molecular Beam Epitaxy on Ge(001)2x1 and Si(1001)2x1 from Ge2H6: Growth Kinetics and Surface Roughening. T. R. Bramblett, Q. Lu, N.-E. Lee, N. Taylor, M.-A. Hasan, and J. E. Greene J. Appl. Phys., 77, 1504 (1995).
29. Surface Morphology During Multilayer Epitaxial Growth of Ge(001) J. E. Van Nostrand, S. Jay Chay, M.-A. Hasan, D. G. Cahill, and J.E. Greene Phys. Rev. Lett. 74, 1127, (1995).
30. B Incorporation in Ge(001) Grown by Gas-Source Molecular-Beam-Epitaxy from Ge2H6 and B2H6 Q. Lu, T.R. Bramblett, M.-A. Hasan, N.-E. Lee and J. E. Greene. J. Appl. Phys, 78, 6027 (1995).
31. Growth of Metastable Ge1-xSnx/Ge Strained Layer Superlattices on Ge(001)2x1 by Temperature Modulated Molecular Beam Epitaxy O. Gurdal, M.-A. Hasan, M. Sardela, J. E. Greene, H.H. Radamson, J.E. Sundgren and J. V. Hansson. Appl. Phys. Lett. 67, 956 (1995).
1. Delta-Type Doping in Si Layers Grown by Molecular Beam Epitaxy Using Low-Energy Ion Beam. M.-A. Hasan, L.C. Markert, G. Radnoczi, J.-E. Sundgren and J. E. Greene.
2. Low-Energy Ion Assisted Growth of Metals on Insulators; Experimental Evidences for Surface Dissociation Via Ion Bombardments. M.-A. Hasan, J.-E. Sundgren and J.E. Greene.
1. Amorphous Silicon-Selenium for Photovoltaic Application. A. Al-Jasar, S.A. Abo-Namous, F.G. Wakim and M.-A. Hasan. Solar World Congress, Perth, Australia, Aug. 1983
2. F.G. Wakim, A. Al-Jassar, M.-A Hasan and K-Z. Botros. 10th International Conference on Amorphous and Liquid Semiconductors, Tokyo, Japan, Aug. 1983.
3. Indium Incorporation During the Growth of Si by Molecular Beam Epitaxy. J. Knall, J.-E. Sundgren, G.V. Hansson, M.-A. Hasan, J.E. Greene,S.A. Barnett, A. Rockett. Swedish Vacuum Society Symposium on Deposition of Compounds by Vacuum Evaporation, Stockholm, Sweden, Nov. 29, 1984.
4. Spectroscopic Characterization of some Polyanilines. W.R. Salaneck, I. Lundström, B. Liedberg, M.-A. Hasan, R. Erlandsson, A.G. MacDiarmid and N.L.D. Somasiri. International Winter School on Electronic Properties of Polymers, Kirchberg, Austria, Feb. 1985.
5. Thermal and Accelerated (<200eV) In Doping of Si(100) Layers During Molecular Beam Epitaxy. A. Rockett, J. Knall, M.-A. Hasan, J.-E. Sundgren, S.A. Barnett and J.E. Greene. 32nd National Symposium of American Vacuum Society, Houston, Texas, USA, Nov. 19-22, 1985.
6. Accelerated Ion Beam Doping During Si Growth by Molecular Beam Epitaxy and Ion- enhanced In Film Deposition Using a Low Energy In Ion Source. M.-A Hasan, S.A. Barnett, A. Rockett, J. Knall, J.-E. Sundgren and J.E. Greene. 4th Conference on Low Energy Ion Beams, University of Sussex, Brighton, UK, April 7-10, 1986.
7. Ionized-Beam Dopant Incorporation in Si Films Grown by Molecular beam epitaxy. S.A. Barnett, M.-A. Hasan, J. Knall, J.-E. Sundgren, A. Rockett and J.E. Greene. IPAT Workshop, Uppsala, SWEDEN, June 1986.
8. Ion-Surface Interactions During the Nucleation and Growth of Indium Films Deposited in UHV Using Ionized,Accelerated Beams M.-A. Hasan, S.A. Barnett, J.-E: Sundgren and J.E. Greene. 10th International Vacuum Congress, 6th Internatonal Conference on Solid Surfaces, 33rd National Symposium of the American Vacuum Society, Baltimore, Maryland USA, Oct. 27-31, 1986.
9. Mass Spectroscopy of Chemical Processess in Conducting Polymers: Polyaniline. K. Uvdal, M.-A. Hasan, J.O. Nilsson, W.R. Salaneck, I. Lundström, A.G. MacDiarmid, A. Rechter and M. Angelopoulos. Winter School on Electronic Properties of Polymers, Kirchberg, Austeria, March 14-21, 1987.
10. N. Hirashita, J.-P. Noel, L. Markert, A. Rockett,,J.E. Greene, M.-A. Hasan, J. Knall, W.-X. Ni, and J.-E. Sundgren in "Materials Modification and Growth Using Ion Beams" eds. U. Gibson, A.E. White and P.P. Pronko, (Materials Research Society, Vol. 93, Pittsburgh, PA, 1987) P3.
11. Accelerated Ion Beam Doping During Growth of Si(100) Layers By Molecular Beam Epitaxy. M.-A. Hasan, J. Knall, W.-X. Ni, S.A. Barnett, J.-E. Sundgren, A. Rocket, L. Markert and J.-E. Greene. 2nd Nordic Conference on Surface Science, Linköping, Sweden, June 15-17, 1987.
12. Adsorption and Desorption of In on Si(100). J. Knall, M.-A. Hasan, S.A. Barnett, G.V. Hansson, J. Sundgren, and J.E. Greene. 2nd Nordic Conference on Surface Science, Linköping, Sweden, June 15-17, 1987.
13. In Incorporation in MBE Si(100) layers Using Low-Energy Secondary and Primary Ion Implantation During Growth. J. Knall, M.-A. Hasan, J.-E. Sundgren, A. Rockett, L. Markert and J. E. Greene. 2nd International Symposium on Si Molecular Beam Epitaxy, Honolulu, Hawaii, USA, Oct. 20-23, 1987.
14. Thermal and Secondary Implantation Doping with Al During Growth of Si(100) by Molecular Beam Epitaxy. M.-A. Hasan, J.-E. Sundgren, L. Markert and J. E. Greene. European Materials Research Society (E-MRS) Spring Meeting, Symposium B "Photon, Beam and Plasma Assisted Processing Fundamentals and Device Technology", Strasbourg, France, May 31- June 2, 1988.
15. Carrier Lifetime in *-Doped Silicon. V. Grivickas, M.-A. Hasan, M. Kull, J.A. Tellefsen and M. Willander. 13th Nordic Semiconductor Meeting, Saltsjöbad, Sweden, 5-8 June, 1988.
16. Dopant Depth Distributions and Carrier Mobilities of Al Doped Si layers grown by Molecular Beam Epitaxy. M.-A. Hasan, L.C. Markert, G. Radnoczi, J.-E. Sundgren, G.V. Hansson and J.E. Greene. 3rd International Conference on Shallow Impurities in Semiconductors, Linköping, SWEDEN, August 10-12, 1988.
17. Ion-Surface Interactions Effects on the Nucleation and Growth of In Films Deposited in UHV Using Low-Energy Ion Beams. M.-A. Hasan, J.-E. Sundgren, J.E. Greene. Plasma-Surface Interaction and Processing of Materials, NATO advanced study Institute, Alicante, Spain, September 4-16, 1988.
18. Low-Energy Accelerated-Ion Doping of Si During Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties. L.C. Markert, J. Knall, J.-P. Noel, M.-A. Hasan, J.E. Greene, and J.-E. Sundgren. Plasma-Surface Interaction and Processing of Materials, NATO advanced study institute, Alicante, Spain, September 4-16, 1988.
19. Defect Formation in Al Doped Si(100) Grown by Molecular Beam Epitaxy and Solid Phase Epitaxy. G. Radnoczi, M.-A. Hasan, J.-E. Sundgren, L.R. Wallenberg. 6th Oxford Conference on Microscopy of Semiconducting Materials, Oxford, UK, 10-13 April, 1989. Inst. Phys. Conf. Ser. No-100, Sec. 3, p. 235, 1989.
20. Experimental Evidence for Surface Diffusivity Enhancements via Cluster Dissociation by Low Energy Ion Bombardment During Film Growth M.-A. Hasan, J.-E. Sundgren and J.E. Greene. European Materials Research Society (E-MRS) Spring Meeting, Symposium D, " Beam Processing and Laser Chemistry," Strasbourg, France, May 30 - June 2, 1989.
21. Thermal and Accelerated (< 500 eV) Al Doping of Si(100) Layers During Molecular Beam Epitaxy. M.-A. Hasan, L.C. Markert, J.-E. Sundgren and J.-E. Greene. European Materials Research Society (E-MRS) Spring Meeting, Symposium A, "3rd International Symposium on Si MBE", Strasbourg, France, May 30 - June 2, 1989.
22. Epitaxial Growth of Al on Si(100) by Evaporation in Ultra High Vacuum. M.-A. Hasan, G. Radnoczi and J.-E. Sundgren. 11th International Vacuum Congress, Köln, W. Germany, 25th - 29th September 1989.
23. Single Crystalline Growth of Al on Si(100) and Si(111) Induced by Surface Reordering. M.-A. Hasan, G. Radnoczi, J.-E. Sundgren, and G.V. Hansson. American Vacuum Society 37th Annual Symposium and Topical Conferences, Toronto, Canada, Oct. 8-12, 1990.
24. Defects Formation in Si Grown by Solid Phase Epitaxy or MBE, as Influenced by the Structure of a-Si and Al Doping. G. Radnoczi, M.-A. Hasan, and J.E. Sundgren. 3rd Hungarian-Austrian Joint Conference on Electron Microscopy, Balatonfüred, Hungary, Sept. 19-21, 1991.
25. Defect Formation in Si, Grown by Solid Phase Epitaxy as Influenced by the Structure of a-Si and Al doping. G. Radnoczi, M.-A. Hasan, and J.E. Sundgren. 3rd European Vacuum Conference and Austrian-Hungarian-Yugslav Fifth Joint Conference,Vienna, Austria, Sept. 23-27, 1991
26. Critical Epitaxial Thicknesses for Low-Temperature (20-100*C) Ge(001)2x1 Growth by Molecular Beam Epitaxy. G. Xue, H.Z. Xiao, M.-A. Hasan, and J.E. Greene. Materials Research Society (MRS), Fall 92, Symposium B, Boston, MA, USA, Nov.30- Dec. 4, 1992.
27. Evidence for Ion-Induced Cluster Dissociation and Enhanced Adatom Mobilities During Low-Energy Primary Ion Beam Deposition of In in UHV. M.-A. Hasan, J.-E. Sundgren, and J. E. Greene 40th National AVS symposium and Topical Conferences, Nov. 14-19, 1993, Orlando, USA.
28. Growth Kinetics and Microstructure Evolution During Gas-Source Molecular Beam Epitaxial Growth of Si1-xGex on Si(100)2x1 from Si2H6 and Ge2H6. T. Bramblett, J. Lu, T. Karasawa, M.-A. Hasan, and J.E. Greene 40th National AVS symposium and Topical Conferences, Nov. 14-19, 1993, Orlando, USA.
29. MBE growth of Al on Si(100)2x1: Crystal Structure and Growth of Mode Dependence on the Deposition Temperature. M.-A. Hasan, G. Radnoczi, J.-E. Sundgren, and J.E. Greene. International Conference on Metallurgical Coatings and Thin Films (ICMCTF-94), San Diego, California, USA, April 25-29, 1994.
30. Solid-Metal Mediated Molecular Beam Epitaxy of Si(100)2x1: A new Epitaxial Growth Method. M.-A. Hasan, J.-E. Sundgren, and J. E. Greene. 4th European Vacuum Conference (EVC-4), 1st Swedish Vacuum Meeting (SVM-1), Uppsala, Sweden, June 13-17, 1994
31. Si(100)2x1 and Ge(100)2x1 Gas-Source Molecular Beam Epitaxy From Si2H6 and Ge2H6: Growth Kinetics and Boron Doping. T.R. Bramblett, Q. Lu, T. Karasawa, M.-A. Hasan, S.K. Jo, and J. E. Greene. 4th European Vacuum Conference (EVC-4), 1st Swedish Vacuum Meeting (SVM-1), Uppsala, Sweden, June 13-17, 1994
32. B-doped Si(001) grown by Gas-Source Molecular Beam Epitaxy from Si2H6 and B2H6: B Incorporation and Electrical Properties. Q. Lu, T.R. Bramblett, N.-E. Lee, M.-A. Hasan, S.K. Jo, T. Karasawa, and J. E. Greene. 41th National AVS symposium and Topical Conferences, Oct. 24-28, 1994, Denver, Colorado, USA.
33. Spatial Correlations in Surface Roughness During Low Temperature Epitaxial Growth of Ge(001). J.E. Van Nostrand, S. J. Chay, D. G. Cahill, M.-A. Hasan, J.E. Greene 41th National AVS symposium and Topical Conferences, Oct. 24-28, 1994, Denver, Colorado, USA.
34. High-Resolution XRD Reciprocal Space Mapping Study of Si1-xGex/Si(100) Grown by GS-MBE from Si2H6/Ge2H6 M.R. Sadela, Jr., Q. Lu, N. Taylor, T. Bramblett, M.-A. Hasan, J.-E. Sundgren, J. E. Greene. 42nd National AVS symposium, Oct. 16-20, 1995, Minneapolis, Minnesota, USA.
35. Solid-Metal Mediated Molecular Beam Epitaxy (SMM-MBE) of Si(111) at a Buried Interface: A New Epitaxial Growth Method. M.-A. Hasan, J.-E. Sundgren, J. E. Greene. 42nd National AVS symposium, Oct. 16-20, 1995, Minneapolis, Minnesota, USA.
36. B-Doped SiGe(001) Grown by Gas-Sourse Molecular Beam Epitaxy from Si2H6 and B2H6: B Incorporation and Electrical Properties. Q. Lu, T. R. Bramblett, M.R. Sardela, Jr., M.-A. Hasan, J.E. Greene. 42nd National AVS symposium, Oct. 16-20, 1995, Minneapolis, Minnesota, USA.
37. Growth of Epitaxial Metastable Ge1-xSnx/Ge Strained Layer Superlattices and Ge1-xSnx alloys on Ge(001)2x1 by Temperature Modulated Molecular Beam Epitaxy O. Gurdal, M.-A. Hasan, M. Sardela, J. E. Greene, H.H. Radamson, J.E. Sundgren and J. V. Hansson. 1995 MRS Fall Meeting, Symposium D: Evolution of Epitaxial Structure and Morphology, Nov. 27-Dec. 1, 1995 , Boston, Massachusetts, USA
38. Ozone Treatment of Porous Silicon H. Thompson, Z. Yamani, J. E. Greene, M. Nayfeh, M.-A. Hasan, L. A. Hassan American Physical Society March Meeting, St. Louis, MO, USA, March 18-22, 1996
39. Morphology of Epitaxial Growth of Germanium on Silicon and Porous Silicon. Z. Yamani, H. Thompson, M.-A. Hasan, J. E. Greene, M. Nayfeh. American Physical Society March Meeting, St. Louis, MO, USA, March 18-22, 1996
40. Epitaxial Growth of Si(111) at Buried Interfaces Using Solid-Metal Mediated Molecular Beam Epitaxy M.-A. Hasan, J.E. Sundgren, J. E. Greene 1996 MRS Spring Meeting, April 8-12, 1996 , San Francisco, California, USA.
1. The Construction, Characterization and Use of a Low-Energy, Ultra-High Vacuum Compatible, Metal Ion Source. M.-A. Hasan. Linköping Studies in Science and Technology, Thesis no. 120, LiU-TEK-LIC-1987: 21, ISBN 91-7870-205-4
2. Growth and Characterization of Overlayers Deposited in UHV Using Thermal and Low- energy ion beam. M.-A. Hasan. Linköping Studies in Science and Technology, Dissertations, No. 235 ISBN 91-7870-697-1.
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Contact me at: mhasan@uncc.edu