| Faculty Profile
Mohamed-Ali Hasan, Ph.D.
Assistant Professor of Electrical Engineering
Homepage |
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| Phone | (704) 510-6414 | mhasan@uncc.edu |
| FAX | (704) 547-2352 | |
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Growth, characterization and device
implementation in electronic materials, especially
wide bandgap semiconductors such as GaN, AIN,
SiC, and diamond; detailed investigation
of growth mechanism; growth methods, device
processing/examination. |
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Dr. Hasan received his Ph.D. and Licentiate of Engineering from the Thin Film Division of the Department of Physics and Measurement Technology at Linköping Institute of Technology (Sweden) in the areas of molecular beam epitaxy (MBE) of semiconductors and low-energy ion-beam deposition. At Linköping, he worked on low-energy (25-500 eV) accelerated-ion beam doping during Si MBE. He published more than 15 papers in this area, including modeling the basic physics of ion incorporation; the development of surface phase diagrams to relate dopant segregation, desorption, and incorporation; device fabrications; and opto-electronic properties. From a technological point of view, Mohamed,s work is known world-wide in Si MBE laboratories since high surface segregation rates and low dopant incorporation probabilities were a "show stopper." During his research career, he has obtained more than eight scholarships and awards from various national and international organizations. After graduating, he received the Welch Scholarship Award to continue his research interests as a Research Assistant Professor at the Coordinated Science Laboratory and the Materials Research Laboratory of the University of Illinois. There he worked on MBE and UHV-CVD growth of semiconductors. He has made important contributions in using in-situ RHEED, video-RHEED, and STM together with post-deposition high resolution TEM/XTEM to understand fundamental limitations to low-temperature epitaxy during MBE growth process. In the area of UHV-CVD (gas-source MBE), he has used a combination of EELS, STM, STS, RHEED, and TEM to understand atomic mechanisms and model stepwise kinetics of Si and Ge growth from Si2H6 and Ge2H6.
Since joining the faculty in 1995, Dr. Hasan, together with other professors in the department, is establishing a new research program in the area of wide bandgap (diamond, SiC, AlN, and GaN) semiconductors growth, characterization, and device implementation.
Selected Recent Publications
More than 31 referred journal publications and 39 contributions to scientific conferences, including:
"Incorporation of Accelerated Low-Energy (50-500 eV) In Ions In+ in Si(100) Films During Growth by Molecular Beam Epitaxy,". with J. Knall, S.A. Barnett, J.E. Sundgren, L.C. Markert, A. Rockett and J.E. Greene. J. Appl. Phys, 65, 172, 1989.
"Incorporation Probabilities and Depth Distributions of Coevaporated Al During Si(100) Molecular Beam Epitaxy," with J. E. Sundgren, J.V. Hansson, L.C. Markert and J.E. Greene. Thin Solid Films, 184, 61 (1990).
"Epitaxial Growth of Al on Si by Thermal Evaporation in Ultra-High Vacuum: Growth on Si(100) 2x1 Single Domain and Double Domain Surfaces at Room Temperature", with G. Radnoczi, J. E. Sundgren and G.V. Hansson, Surface Sci. 236, 53 (1990).
"Growth of Metastable Ge1-xSnx/Ge Strained Layer Superlattices on Ge(001)2x1 by Temperature Modulated Molecular Beam Epitaxy", with O. Gurdal, M. Sardela, J. E. Greene, H.H. Radamson, J. E. Sundgren and J. V. Hansson, Appl. Phys. Lett. 67, 956 (1995).
"Growth and Characterization of Overlayers Deposited in UHV Using Thermal and Low-Energy ion Beam," Linkoping Studies in Science and Technology, Dissertations, No. 235, ISBN 91-7870-697-1.
Click for the full Publication list
Credentials
Ph.D. in Materials Physics, Department of Physics and Measurement Technology, Linkoping Institute of Technology, Sweden, Sept. 1990.
Licentiate of Engineering, Department of Physics and Measurement Technology, Linkoping Institute of Technology, Sweden, 1987.
Professional and Honorary Societies
American Vacuum Society.