During the past two decades, there has been a large driving force for heteroepitaxial growth of group IV and III-V semiconductors and alloys on Si substrates. The interest was driven by the anticipated bandgap engineering, quantum confinement of carriers, and the incorporation of wide bandgap materials such as SiC, Diamond, GaAs, GaN, InN, AlN, and cubic-BN in well established Si microdevice technology. Wide bandgap materials have attracted a special interest due to their potential for use in high-power, high-frequency, high-temperature, high-speed, and short wavelength optoelectronic devices. Beside the electronic industry interest, there is a wide range of applications extending from mechanical systems to domestic use due to the unique mechanical, optical, and thermal properties of these materials. However, most of epitaxial growth efforts were hampered by the large lattice mismatch between Si and other semiconductors which leads to the formation of misfit dislocations and the onset of three dimensional growth mode once the layer thickness reaches a critical value.

In this project, we have examined a new method for integrating SiC on a Si wafer and fabricate a Schottky diode on the resulting heterojunction. A breakdown voltage of up to 120V was achieved.