NAME: M.-A. Hasan.
ADDRESS:
Department of Electrical Engineering, University of North Carolina, Charlotte, NC 28223, USA Tel: (704) 510-6414, Fax: (704) 547-2352 E-mail: mhasan@uncc.edu. Internet:http://www.coe.uncc.edu/~mhasan
RESEARCH INTEREST:
Epitaxial growth, characterization and device implementation in wide bandgap materials (GaN, AlN, Diamond, and SiC).
AWARDS AND SCHOLARSHIPS:
More than eight awards and scholarships from international and national organizations.
More than 31 refereed articles in scientific journals, 40 contributions to international and national conferences.
CURRENT POSITION:
Assistant Professor, Dept. of Electrical Engineering, University of North Carolina
EXPERIENCE:
- Electronic materials:
- Growth and characterization of device structures and quantum well based superlattices.
- Epitaxial growth and doping of semiconducting materials (MBE, GS-MBE, SPE) - Low-energy, ion-assisted growth of thin films.
- Epitaxial growth of metals on semiconductors (metals used in metallization). - Metal/semiconductor interfaces and reactions.
Analysis:
- Ex-situ: Electrical and optical characterizations, High-resolution triple axis XRD, TEM, SEM, SIMS
- In-situ: LEED, RHEED, XPS, AES, Mass-spectroscopy, EELS, STM.
Services and Management:
- Direct and co-supervision of more than 10 postgraduate students from 6 nationalities.
- Direct responsibility for the largest Si MBE system in Scandinavia (1986-91) and the MBE as well as the GS-MBE systems at the University of Illinois (1991- 1995)
Toxic-Gas Handling and safety:
- Toxic-gas handling systems for UHV-CVD and GS-MBE, safety procedures and controls.
EDUCATION:
- Ph.D. in Materials Physics, Institute of Physics and Measurement Technology, Linköping Institute of Technology, Sweden, Sept. 1990.
- Licentiate of Engineering (2-3 years program after the Master degree), Institute of Physics and Measurement Technology, Linköping Institute of Technology, Sweden, 1987.