1. Growth and device implementation in wide bandgap semiconductors (GaN,
AlN, InN, SiC, Diamond) using molecular beam epitaxy (MBE), gas-source
MBE and atomic layer epitaxy (ALE). This effort focuses on the cubic phase of
SiC and group III-nitrides, integration with existing Si technology, and possible
emergence of wafer fabrication methods in this material system.
2. Develop a new Silicon-on-Insulator (SOI) technology using a newly
developed epitaxial method; solid-metal mediated molecular beam epitaxy
(SMM-MBE).
3. Farication and growth of planar field emission devices using group
II-VI materials.